amplifiers - l ine a r & p ower - ch ip 1 HMC1014 v00.0312 gaas phempt mmic 0.5 watt power amplifier 33.5 - 46.5 ghz functional diagram features p 1db o utput p ower: +24.5 dbm p sat o utput p ower: +27.5 dbm high gain: 21 db o utput ip 3: +35 dbm s upply voltage: vdd = +6v @ 500 ma 50 o hm m atched i nput/ o utput die s ize: 2.76 x 1.6 x 0.1 mm typical applications the h m c1014 is ideal for: ? point-to-point radios ? point-to-multi-point radios ? vsat & satcom ? military & space general description the h m c1014 is a four stage gaas ph em t mmi c m edium p ower amplifer die which operates between 33.5 and 46.5 ghz. the amplifer provides 21 db of gain, +27.5 dbm of saturated output power, and 27% p a e from a +6v supply. w ith up to +35 dbm oip 3 the h m c1014 is ideal for high linearity applications in miltary and space as well as point-to-point and point- to-multi-point radios. the h m c1014 amplifer i / o s are internally matched facilitating integration into mutli- chip-modules ( m cm s). all data shown herein was measured with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). electrical specifcations, t a = +25 c, vdd1 - vdd8 = +6v, idd = 500 ma [1] p arameter m in. typ. m ax. m in. typ. m ax. units f requency r ange 33.5 - 43 43 - 46.5 ghz gain 18 21 18 21 db gain variation o ver temperature 0.029 0.035 db/ c i nput r eturn l oss 25 32 db o utput r eturn l oss 18 17 db o utput p ower for 1 db compression ( p 1db) 22 24.5 21 23.5 dbm s aturated o utput p ower ( p sat) 27. 5 26.5 dbm o utput third o rder i ntercept ( ip 3) [2] 35 34 dbm total s upply current 500 500 ma [1] adjust vgg between -2 to 0v to achieve i dd = 500 ma typical. [2] m easurement taken at p out / tone = +15 dbm. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - ch ip 2 HMC1014 v00.0312 gaas phempt mmic 0.5 watt power amplifier 33.5 - 46.5 ghz output return loss vs. temperature gain & return loss gain vs. temperature p1db vs. temperature input return loss vs. temperature p1db vs supply voltage -50 -40 -30 -20 -10 0 10 20 30 31 33 35 37 39 41 43 45 47 49 s21 s11 s22 response (db) frequency (ghz) 16 18 20 22 24 26 28 33 35 37 39 41 43 45 47 +25 c +85 c -55 c gain (db) frequency (ghz) -50 -40 -30 -20 -10 0 33 35 37 39 41 43 45 47 +25 c +85 c -55 c return loss (db) frequency (ghz) -40 -30 -20 -10 0 33 35 37 39 41 43 45 47 +25 c +85 c -55 c response (db) frequency (ghz) 19 21 23 25 27 29 33 35 37 39 41 43 45 47 +25c +85c -55c frequency (ghz) p1db (dbm) 19 21 23 25 27 29 33 35 37 39 41 43 45 47 5v 5.5v 6v frequency (ghz) p1db (dbm) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - ch ip 3 HMC1014 v00.0312 gaas phempt mmic 0.5 watt power amplifier 33.5 - 46.5 ghz psat vs. supply current psat vs. temperature psat vs. supply voltage output ip3 vs. temperature, pout/tone = +15 dbm p1db vs. supply current output ip3 vs. supply current, pout/tone = +15 dbm 19 21 23 25 27 29 33 35 37 39 41 43 45 47 +25 c +85 c -55 c frequency (ghz) psat (dbm) 19 21 23 25 27 29 33 35 37 39 41 43 45 47 5v 5.5v 6v frequency (ghz) psat (dbm) 19 21 23 25 27 29 33 35 37 39 41 43 45 47 400 ma 450 ma 500 ma frequency (ghz) p1db (dbm) 19 21 23 25 27 29 33 35 37 39 41 43 45 47 400 ma 450 ma 500 ma frequency (ghz) psat (dbm) 23 27 31 35 39 43 33 35 37 39 41 43 45 47 +25 c +85 c -55 c frequency (ghz) ip3 (dbm) 23 27 31 35 39 43 33 35 37 39 41 43 45 47 400 ma 450 ma 500 ma frequency (ghz) ip3 (dbm) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - ch ip 4 HMC1014 v00.0312 gaas phempt mmic 0.5 watt power amplifier 33.5 - 46.5 ghz output im3 @ vdd = +6v power compression @ 34 ghz output im3 @ vdd = +5v output im3 @ vdd =+5.5v output ip3 vs. supply voltage, pout/tone = +15 dbm 23 27 31 35 39 43 33 35 37 39 41 43 45 47 5v 5.5v 6v frequency (ghz) ip3 (dbm) 0 10 20 30 40 50 60 10 12 14 16 18 20 22 24 34 ghz 36 ghz 38 ghz 40 ghz 42 ghz 44 ghz 46 ghz pout/tone (dbm) im3 (dbc) 0 10 20 30 40 50 60 10 12 14 16 18 20 22 24 34 ghz 36 ghz 38 ghz 40 ghz 42 ghz 44 ghz 46 ghz pout/tone (dbm) im3 (dbc) 0 10 20 30 40 50 60 10 12 14 16 18 20 22 24 34 ghz 36 ghz 38 ghz 40 ghz 42 ghz 44 ghz 46 ghz pout/tone (dbm) im3 (dbc) power compression @ 40 ghz 0 5 10 15 20 25 30 -9 -6 -3 0 3 6 9 12 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%) 0 5 10 15 20 25 30 -9 -6 -3 0 3 6 9 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - ch ip 5 HMC1014 v00.0312 gaas phempt mmic 0.5 watt power amplifier 33.5 - 46.5 ghz gain & power vs. supply current @ 40 ghz power dissipation gain & power vs. supply voltage @ 40 ghz reverse isolation vs. temperature power compression @ 46 ghz 0 5 10 15 20 25 30 -9 -6 -3 0 3 6 9 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%) 10 15 20 25 30 35 400 420 440 460 480 500 gain(db) p1db(dbm) psat(dbm) idd (ma) gain (db), p1db (dbm), psat (dbm) 10 15 20 25 30 35 5 5.2 5.5 5.7 6 gain(db) p1db(dbm) psat(dbm) vdd (v) gain (db), p1db (dbm), psat (dbm) -60 -50 -40 -30 -20 -10 0 33 35 37 39 41 43 45 47 +25c +85c -55c frequency (ghz) isolation (db) 0 1 2 3 4 5 6 -10 -6 -2 2 6 10 34 ghz 36 ghz 38 ghz 40 ghz 42 ghz 44 ghz 46 ghz power dissipation (w) input power (dbm) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - ch ip 6 HMC1014 v00.0312 gaas phempt mmic 0.5 watt power amplifier 33.5 - 46.5 ghz absolute maximum ratings drain bias voltage (vdd) +7 vdc rf i nput p ower ( rfin ) +18 dbm channel temperature 150 c continuous p diss (t= 85 c) (derate 48.3 m w /c above 85 c) 3.14 w thermal r esistance (channel to die bottom) 20.7 c/ w s torage temperature -65 to 150c o perating temperature -55 to 85 c vdd (v) i dd (ma) +5 500 +5.5 500 +6 500 typical supply current vs. vdd ele ct ros tat ic sensi t i v e de v ic e o b ser v e ha n d lin g pre caut ions outline drawing no t es : 1. a ll d imensions a re in in ch es [ mm ] 2. d ie th i ck ness is .004 3. ty pi ca l b on d p ad is .004 s qua re 4. back si d e me ta lli zat ion : g ol d 5. b on d p ad me ta lli zat ion : g ol d 6. back si d e me ta l is g ro u n d. 7. c onne ct ion not re qu ire d for u nl ab ele d b on d p ad s . 8. ov er a ll d ie si z e .002 die packaging information [1] s tandard alternate g p -1 (gel p ack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - ch ip 7 HMC1014 v00.0312 gaas phempt mmic 0.5 watt power amplifier 33.5 - 46.5 ghz p in n umber f unction description i nterface s chematic 1 rfin rf signal input. this pin is ac coupled and matched to 50 o hms over the operating frequency range. 2, 12 vgg1, vgg2 gate control for amplifer. amplifer can be biased by either vgg1 or vgg2. e xternal bypass capacitors of 100 p f , 0.01u f , and 4.7 u f capacitors are required. 3, 4, 5, 6 vdd1-4 drain bias voltage for the top half of the amplifer. e xternal bypass capacitors of 100 p f required for each pin, followed by common 0.01u f and 4.7 u f capacitors 7 rfo ut rf signal output. this pad is ac coupled and matched to 50 o hms over the operating frequency range. 8, 9, 10, 11 vdd5-8 drain bias voltage for the bottom half of the amplifer. e xternal bypass capacitors of 100 p f required for each pin followed by common 0.01 u f and 4.7 u f capacitors. die bottom g nd die bottom must be connected to rf /dc ground. pin descriptions application circuit for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - ch ip 8 HMC1014 v00.0312 gaas phempt mmic 0.5 watt power amplifier 33.5 - 46.5 ghz assembly diagram for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - ch ip 9 HMC1014 v00.0312 gaas phempt mmic 0.5 watt power amplifier 33.5 - 46.5 ghz mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see h m c general handling, m ounting, bonding n ote). 50 o hm m icrostrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing rf to and from the chip ( f igure 1). i f 0.254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. o ne way to accom - plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane ( f igure 2). m icrostrip substrates should be located as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either w affle or gel based es d protec - tive containers, and then sealed in an es d protective bag for shipment. o nce the sealed es d protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. d o no t attempt to clean the chip using liquid cleaning systems. static sensitivity: f ollow es d precautions to protect against > 250v es d strikes. transients: s uppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick- up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting the chip is back-metallized and can be die mounted with au s n eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fat. e utectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. w hen hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. d o no t expose the chip to a temperature greater than 320 c for more than 20 seconds. n o more than 3 seconds of scrubbing should be required for attachment. e poxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom - mended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. w irebonds should be started on for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
amplifiers - l ine a r & p ower - ch ip 10 HMC1014 v00.0312 gaas phempt mmic 0.5 watt power amplifier 33.5 - 46.5 ghz notes: for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
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